Technological Applications of PDE's -- RICAM/UFSC
Workshop
Technological Applications of PDE's
Florianopolis , Brazil
2-6 February 2004
Department of Mathematics (MTM)
Federal University of St Catarina (UFSC)
&
Radon Institute for Computational and Applied Mathematics (RICAM)
Austrian Academy of Sciences (OEAW)
The aim of the meeting entitled Technological Applications of Partial
Differential Equations is to bring together a number of specialists in
PDE's, and in particular to focus on modern analytic and numeric tools
for Technological Applications.
This is a meeting organized and sponsored by the
Department of Mathematics (MTM
/ UFSC), the Radon Institute
(RICAM /
OEAW), the
Millennium Institute (IM-AGIMB),
and the Institute for Pure and Applied Mathematics
(IMPA).
Tentative Program
The preliminary list of invited speakers includes:
- Christian Ringhofer (Arizona State University)
- Uri Ascher (British Columbia)
- Jorge P. Zubelli (IMPA)
- Alexandre Madureira (LNCC)
- Gustavo P. Menzala (LNCC)
- Peter Markowich (RICAM/University Vienna)
- Christian Schmeisser (RICAM/TU Vienna)
- Antonio Leitao (RICAM/UFSC)
- Norayr Matevosyan (RICAM)
- Max Souza (UFF)
- Liliane Barichello (UFRGS)
- Igor Mozolevski (UFSC)
- Celso Doria (UFSC)
- Joel Souza (UFSC)
- Ruy Charao (UFSC)
- Pablo Amster (University Buenos Aires)
- Otmar Scherzer (University Innsbruck)
- Markus Haltmeier (University Innsbruck)
- Philipp Kuegler (University Linz)
Additional Information:
- Address:
- Department of Mathematics
- Federal University of St Catarina
- 88040-900 Florianopolis, SC
- BRAZIL
- Contat:
- Tel: +55 48 331-9232 / 331-9558
- Fax: +55 48 331-9772
- Email: pg-mat@mtm.ufsc.br
- Organizing Committee: A.Leitao, P.Markowich, I.Mozolevski,
J.P.Zubelli
- Financial support: CNPq
,
IM-AGIMB
Some words on the Workshop's concentration thema:
The drift diffusion equations are the most widely used model to describe
semiconductor devices. From the point of view of applications, there
is great interest in replacing laboratory testing by numerical simulation
in order to minimize development costs. For the current state of technology,
the drift diffusion equations represent a realistic compromise between
computational efficiency (to solve this nonlinear system of partial
differential equations) and an accurate description of the underlying
device physics.
The name drift diffusion equations of semiconductors originates
from the type of dependence of the current densities on the carrier
densities and the electric field. The current densities are the sums of
drift terms and diffusion terms.
It is worth mentioning that, with the increased miniaturization of
semiconductor devices, one comes closer and closer to the limits of
validity of the drift diffusion equation. This is justified, on the one
hand, by the fact that in ever smaller devices the assumption that the
free carriers can be modeled as a continuum becomes invalid. On the
other hand, the drift diffusion equations are derived through a limit
process, where the mean free path of a particle tends to zero.
The mathematical modeling of semiconductor equations has developed
significantly, together with their manufacturing. The basic semiconductor
device equations where first presented, in the actual level of
completeness, by W. Van Roosbroeck in 1950. Since then they have been
subject of intensive mathematical and numerical investigation
Links about Florianopolis:
Some Useful Maps and Files:
Last update: 28 jan. 2004
The background music (only aviable for Windows-Explorer users) is the
hymn of Florianopolis city. It was composed by the local poet Zininho
and it's lyrics describe the many natural beauties of the island.